Semiconductor integrated device and method of fabrication thereof

摘要

A diffusion layer 3 a of a silicon substrate, a polycrystalline silicon material 10 , or a gate electrode 12 is connected to a conductive film 8 through a titanium silicide film 6 within a contact hole 5 provided in an insulating film 4 . The titanium silicide film 6 is formed by the silicide reaction between a titanium film 7 and the silicon. The upper limit of the thickness of the titanium silicide film 6 , and the upper limit of the titanium film 7 are specified by the internal stress within the conductive film 8.