Transistor structures having a transparent channel

摘要

Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO₂. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO₂, the substantially insulating ZnO or SnO₂ being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.