| 摘要 |
A thermoelectric transducer is provided, where a decrease in conversion efficiency due to uneven characteristics of semiconductors is resolved and a decrease in adhesion strength between each element unit and an electrode due to a heat expansion coefficient between the respective thermoelectric transducers. In addition, an improvement of electro thermal conversion efficiency is intended by modifying the structure of the single device. Single element unit (13), which are made off semiconductor of the same type constructed of sintered body cells each containing oxide of a metal element, an oxide of a rare-earth element, and manganese are arranged on a board (5, 12) of a thermoelectric transducer (10). Film-shaped thin-film electrodes are arranged on cooling and heating surfaces so to be integral with the sintered body cell. On these sides, lead wires (16) are connected to each other in series.
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