发明名称 SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHODS
摘要 <p>The present invention relates to a method of manufacturing a semiconductor substrate, which enables a semiconductor device to have high speed operating characteristics and high performance characteristics such as lower electrical power consumption, and a method of manufacturing a semiconductor device including a method of manufacturing the semiconductor substrate thereof in a process, as well as to a semiconductor substrate manufactured by the method of manufacturing the same and a semiconductor device manufactured using the semiconductor substrate. <IMAGE></p>
申请公布号 KR100712572(B1) 申请公布日期 2007.05.02
申请号 KR20047018010 申请日期 2003.05.08
申请人 发明人
分类号 H01L21/76;H01L27/12;H01L21/02;H01L21/265;H01L21/336;H01L21/762;H01L21/764;H01L21/8242;H01L29/78;H01L29/786 主分类号 H01L21/76
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