| 摘要 |
A semiconductor device includes: a semiconductor support substrate having a first conductive type; an insulation layer on the substrate; a semiconductor layer on the insulation layer; a semiconductor element in the semiconductor layer; and a first impurity diffusion region having a second conductive type. The first impurity diffusion region in the substrate contacts the insulation layer, and is isolated from the semiconductor layer with the insulation layer. The first impurity diffusion region and the substrate provide a PN junction diode. The semiconductor element has a maximum operation voltage, and the PN junction diode has an applied voltage opposite to a forward voltage and lower than the maximum operation voltage.
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