GAP FILL METHOD AND METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE USING THE SAME

摘要

A gap-fill method and a method for forming a semiconductor memory device using the same are provided to enhance gap-fill capability and to improve operation characteristics by using in-situ processing of a thin film forming process and an etching process. An insulating layer(130) is formed on a semiconductor substrate(110). A gap region is formed on the resultant structure by recessing selectively the insulating layer. A phase changeable material pattern(135) is formed in the gap region by performing repeatedly thin film forming processes and etching processes. The thin film forming process and the etching process are performed by using in-situ processing.