Doping of ironsulfide based semicondutors, its band-gap control and application as photovoltaic device

摘要

The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group 1 element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.