发明名称 |
DRIVE CIRCUIT FOR POWER SEMICONDUCTOR SWITCHING DEVICE |
摘要 |
A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.
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申请公布号 |
US2007200602(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20070624730 |
申请日期 |
2007.01.19 |
申请人 |
ISHIKAWA KATSUMI;MIYAZAKI HIDEKI;NAGASU MASAHIRO;KONO YASUHIKO |
发明人 |
ISHIKAWA KATSUMI;MIYAZAKI HIDEKI;NAGASU MASAHIRO;KONO YASUHIKO |
分类号 |
H03B1/00 |
主分类号 |
H03B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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