| 摘要 |
Insulation regions in the manner of STI isolations, which run transversely with respect to the word lines, isolate the source/drain regions of adjacent memory cells. Metallic bit lines are applied on the top side and patterned for example along zigzag lines such that the source/drain regions of a memory transistor which are contact-connected by the bit lines are in each case electrically connected by two mutually adjacent bit lines.
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