Memory device performing partial refresh operation and method thereof

摘要

The present invention provides a memory device which comprises a memory cell array having a plurality of memory blocks; a memory controller for controlling a refresh operation with respect to the memory blocks; a refresh check bit storing part for storing refresh check bits corresponding to the memory blocks, respectively; a block select control part for setting refresh check bits of memory blocks to be refreshed to a check state according to a control of the memory controller; a using check bit storing part for storing using check bits corresponding to the memory blocks, respectively; a using check control part for setting refresh check bits of memory blocks access-requested to a check state according to a control of the memory controller; and a partial refresh control part for controlling such that memory blocks corresponding to checked using check bits or refresh check bits according to a control of the memory controller.