| 摘要 |
FIELD: physics, semiconductors. ^ SUBSTANCE: invention refers to semiconductor engineering. Substance of the invention: method of round silicon carbide wafer fabrication consists in monocrystal calibration, slicing, grinding, bevelling, annealing and polishing. Polishing process is four-staged: coarse polishing with coarse-grain diamond paste, fine polishing with fine-grain diamond paste, nanopolishing with silicasol suspension containing "detonation" nanodiamonds with grain size nor exceeding 1 mcm, nanopolishing with silicasol suspension not containing solid abrasive particles. ^ EFFECT: fabrication of polished silicon carbide wafer surfaces of roughness less than 0,5 nm. ^ 2 cl |
