Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AlN), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no SiN between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer.

主权项

1. A semiconductor device, comprising:
a silicon substrate; an initial buffer layer provided on the silicon substrate and including aluminum nitride (AlN); a semiconductor device layer provided on the initial buffer layer and having a semiconductor compound, and a transition layer provided between the initial buffer layer and the semiconductor device layer, wherein the initial buffer layer includes an ultrathin Al film deposited on the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer, and wherein the transition layer includes a plurality of AlN/AlxGa1-xN superlattice unit layers.