发明名称 |
Semiconductor device and electronic apparatus |
摘要 |
A semiconductor device that is connected to a wiring substrate includes a semiconductor substrate, a circuit provided on the semiconductor substrate, a connection terminal, and a guard ring that is provided on a peripheral region. In the semiconductor device, the guard ring includes a plurality of wiring layers, and a wiring layer included in the guard ring, which is the farthest from the semiconductor substrate, corresponds to a wiring layer closer to the semiconductor substrate relative to a wiring layer of the connection terminal. |
申请公布号 |
US9401335(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201414173457 |
申请日期 |
2014.02.05 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
Kasai Toshiyuki;Koshihara Takeshi |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L23/60 |
主分类号 |
H01L23/48 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A semiconductor device that is connected to a wiring substrate comprising:
a semiconductor substrate having an outer edge; a circuit provided on a circuit formation region of the semiconductor substrate; a connection terminal that is connected to a conductive pattern included in the wiring substrate and is provided on the circuit formation region; and a guard ring that includes a plurality of wiring layers and is provided on a peripheral region which is a region between the circuit formation region and the outer edge, wherein the guard ring is provided on a connection region, which overlaps with the wiring substrate, and in the connection region, a first wiring layer of the plurality of wiring layers of the guard ring, which is the farthest from the semiconductor substrate, corresponds to a wiring layer closer to the semiconductor substrate relative to a second wiring layer of the connection terminal, the second wiring layer of the connection terminal being farther from the semiconductor substrate than a first wiring layer of the connection terminal. |
地址 |
Tokyo JP |