Semiconductor apparatus and method for producing the same

摘要

A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

主权项

1. A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, the method comprising:
an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin blended with an inorganic filler with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus,
wherein:the inorganic filler has a maximum particle diameter of 75 μm or less,an amount of the inorganic filler is between 100 and 1,300 parts by weight with respect to 100 parts by weight of the thermosetting resin,the substrate on which a semiconductor device is mounted and the substrate on which no semiconductor device is mounted each have an area of 2,000 mm2 or more and are collectively sealed,the substrate on which no semiconductor device is mounted has a linear expansion coefficient of 25 ppm/° C. or less and a thickness of 20 μm to 1 mm, andconcentrations of each of halogen ions and alkali ions in the thermosetting resin are 10 ppm or less based on an extraction at 120° C. where 10 g of the thermosetting resin is added into 50 ml of ion exchange water, which is then hermetically closed and left to stand still in an oven at 120° C. for 20 hours, followed by extraction heating.