发明名称 HUMIDITY SENSOR
摘要 Provided is a humidity sensor that is increased in capacitance per unit area and is improved in the close adhesiveness and ease of embedding of a humidity sensitive film, while being capable of fitting into normal semiconductor manufacturing processes. A plurality of first electrodes and a plurality of second electrodes are arranged so that each first electrode is adjacent to four of the second electrodes in four directions of up, down, right, and left when viewed in plan view, while each second electrode is adjacent to four of the first electrodes in four directions of up, down, right, and left when viewed in plan view. Metal wiring electrically connects one of the first electrodes to another of the first electrodes, and electrically connects one of the second electrodes to another of the second electrodes.
申请公布号 US2016258894(A1) 申请公布日期 2016.09.08
申请号 US201615050843 申请日期 2016.02.23
申请人 SII Semiconductor Corporation 发明人 FUTATSUGI Toshiro
分类号 G01N27/22 主分类号 G01N27/22
代理机构 代理人
主权项 1. A humidity sensor, comprising: a semiconductor substrate; an insulating film formed on a surface of the semiconductor substrate; a plurality of first electrodes and a plurality of second electrodes, both formed on the insulating film and arranged so that each of the plurality of first electrodes is adjacent to one of the plurality of second electrodes in each of four directions of up, down, right, and left when viewed in plan view, while each of the plurality of second electrodes is adjacent to one of the plurality of first electrodes in each of four directions of up, down, right, and left when viewed in plan view; a first metal wiring formed in the insulating film, for electrically connecting one of the plurality of first electrodes to another one of the plurality of first electrodes; a second metal wiring formed in the insulating film, for electrically connecting one of the plurality of second electrodes to another one of the plurality of second electrodes; and a humidity sensitive film formed on the plurality of first electrodes and the plurality of second electrodes.
地址 Chiba-shi JP