METHOD OF INTEGRATING LOW DIELECTRIC CONSTANT INSULATOR

摘要

PROBLEM TO BE SOLVED: To provide a method for processing a dielectric film on a substrate and a method for integrating a low-k dielectric film with a metal wiring subsequently formed thereto.SOLUTION: A method includes a step of preparing a dielectric film having a value of a dielectric constant of about 4 or less, on a substrate. Then, the method further includes: performing preliminary hardening treatment on the dielectric film; forming a pattern to the dielectric film using lithography and etching treatment; removing an undesired residue from the substrate; and subjecting the dielectric film to final hardening treatment. The final hardening treatment includes a step of irradiating the substrate with ultraviolet (UV) radiation.SELECTED DRAWING: Figure 2