发明名称 MEMS devices and fabrication methods thereof
摘要 A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.
申请公布号 US9450109(B2) 申请公布日期 2016.09.20
申请号 US201313829106 申请日期 2013.03.14
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chu Chia-Hua;Cheng Chun-Wen;Lee Te-Hao;Lin Chung-Hsien
分类号 H01L29/84;H01L21/02;H01L21/50;H01L21/30;H01L21/20;H01L23/00;B81C1/00 主分类号 H01L29/84
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method comprising: providing a micro-electro-mechanical system (MEMS) substrate having: a shielding layer coupled to ground;a plurality of vias coupled to the shielding layer; anda first dielectric layer on a first side of the MEMS substrate; providing a carrier including a plurality of cavities; bonding the first side of the MEMS substrate on the carrier, wherein a first portion of the MEMS substrate is in direct contact with a first portion of the carrier; a second portion of the MEMS substrate is in direct contact with a second portion of the carrier; the first portion of the carrier and the second portion of the carrier are separated by a cavity; and the shielding layer fully covers a contacting surface of the first portion of the carrier and a contacting surface of the second portion of the carrier; forming a first bonding material layer on a second side of the MEMS substrate; applying a sacrificial layer removal process to the MEMS substrate; providing a semiconductor substrate including a second bonding material layer; and bonding the semiconductor substrate on the second side of the MEMS substrate.
地址 Hsin-Chu TW