发明名称 |
MEMS devices and fabrication methods thereof |
摘要 |
A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate. |
申请公布号 |
US9450109(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201313829106 |
申请日期 |
2013.03.14 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chu Chia-Hua;Cheng Chun-Wen;Lee Te-Hao;Lin Chung-Hsien |
分类号 |
H01L29/84;H01L21/02;H01L21/50;H01L21/30;H01L21/20;H01L23/00;B81C1/00 |
主分类号 |
H01L29/84 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A method comprising:
providing a micro-electro-mechanical system (MEMS) substrate having:
a shielding layer coupled to ground;a plurality of vias coupled to the shielding layer; anda first dielectric layer on a first side of the MEMS substrate; providing a carrier including a plurality of cavities; bonding the first side of the MEMS substrate on the carrier, wherein a first portion of the MEMS substrate is in direct contact with a first portion of the carrier; a second portion of the MEMS substrate is in direct contact with a second portion of the carrier; the first portion of the carrier and the second portion of the carrier are separated by a cavity; and the shielding layer fully covers a contacting surface of the first portion of the carrier and a contacting surface of the second portion of the carrier; forming a first bonding material layer on a second side of the MEMS substrate; applying a sacrificial layer removal process to the MEMS substrate; providing a semiconductor substrate including a second bonding material layer; and bonding the semiconductor substrate on the second side of the MEMS substrate. |
地址 |
Hsin-Chu TW |