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发明名称
Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
摘要
申请公布号
CH489906(A)
申请公布日期
1970.04.30
申请号
CH19660017602
申请日期
1966.12.09
申请人
SIEMENS AKTIENGESELLSCHAFT
发明人
SUSSMANN,ERHARD,DIPL.-ING.
分类号
H01L21/00;H01L21/225;H01L21/285;(IPC1-7):H01L7/44
主分类号
H01L21/00
代理机构
代理人
主权项
地址
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