发明名称 GALLIUM NITRIDE CRYSTAL GROWTH
摘要 PROBLEM TO BE SOLVED: To reduce the temperature for growing gallium nitride crystal and control the growing temperature. SOLUTION: Alkyl gallium hydride provided by replacing the methyl group with hydrogen is used for growing gallium nitride crystal instead of trimethyl gallium which has been used conventionally as gallium source. Thus, transiting energy is reduced in the crystal growing process and gallium nitride is grown at a low temperature.
申请公布号 JPH0936045(A) 申请公布日期 1997.02.07
申请号 JP19950179817 申请日期 1995.07.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAO TAKETOSHI
分类号 H01L21/205;H01L33/32 主分类号 H01L21/205
代理机构 代理人
主权项
地址