| 发明名称 |
RESISTANCE FORMING METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To ensure a high sheet resistance free from dispersion, by obtaining the resistance through formation of the second conductive region with the ion injecting method within the second epitaxial layer surrounded by the first conductive region. |
| 申请公布号 |
JPS53110389(A) |
申请公布日期 |
1978.09.27 |
| 申请号 |
JP19770024739 |
申请日期 |
1977.03.09 |
| 申请人 |
OKI ELECTRIC IND CO LTD |
发明人 |
NISHI KENJI;OOTA MASAE;UCHIUMI TADASHI;NAKAMURA ITSUO |
| 分类号 |
H01L27/04;H01L21/265;H01L21/822;H01L29/8605 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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