| 摘要 |
An insulated gate field-effect transistor is formed with an intermediate floating gate disposed between the gate electrode and the channel region, said floating gate including a control part extending laterally from between the gate electrode and channel region. Said intermediate floating gate including said control part are embedded in partial layers of dielectric material, said dielectric material electrically isolating said control part from at least one auxiliary electrode to which a voltage may be fed with respect to the substrate for capacitive coupling to the control part whereby the threshold voltage of the insulated gate field-effect transistor may be adjusted within a limited range.
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