发明名称 POLISHING METHOD FOR SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER CHARGING DISK
摘要 PURPOSE:To effectively prevent the damage of a wafer due to rotation around its own axis by engaging the flat part of the peripheral edge of the wafer with the flat part formed on the inner periphery of a hole of a wafer charging disc and maintaining the wafer impossible to rotate. CONSTITUTION:A flat part Wa is formed at the periphery of a disk-shaped wafer W. A wafer charging disk 11 bonds a thin plactic plate 14 having a true circle hole 13 at the bottom plate 12 of artificial leather, and a flat part 13a which is engaged with the flat part Wa of the wafer is formed on the inner surface of the hole 13 of the plate 14. The wafer is engaged at the flat part Wa with the flat part 13a and intimately charged. Subsequently, the wafer W is polished as the conventional method. In this case, since the wafer is charged in the disc 11 in an impossibly rotatable manner, it is not rotated around its own axis, and can be polished without bonding nor damage of the non-polished surface of the wafer.
申请公布号 JPS58204539(A) 申请公布日期 1983.11.29
申请号 JP19820087813 申请日期 1982.05.24
申请人 MITSUBISHI KINZOKU KK;NIHON SILICONE KK 发明人 INOUE FUMIO
分类号 H01L21/304 主分类号 H01L21/304
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