| 摘要 |
<p>A SOI device which permits both the kink effect to be avoided and threshold voltage to be regulated, and a new method for fabricating SOI ICs. The device (50) includes an electrically conductive pathway (120) extending from the active volume (60) and terminating in a non-active region of the substrate (20) of the device. A backgate bias is communicated to, and kink-inducing charges are conducted away from, the active volume through the conductive pathway. The fabrication method permits SOI ICs to be fabricated using available circuit designs and pattern delineating apparatus. This method involves the formation of a precursor substrate surface which includes islands of insulating material, each of which is encircled by a crystallization seeding area (170) of substantially single crystal semiconductor material. A layer of non-single crystal semiconductor material (45) is formed on the precursor substrate surface (30), crystallized and a IC is formed in.</p> |
