| 摘要 |
<p>A method for producing thin films of chalcogenides of the rare earths characterized by introducing a rare earth metal vapor into an atmosphere not containing oxygen, but containing a gaseous chalcogen as well as hydrogen, at a total pressure about 1 x 10-4, giving rise to a reaction which forms a gaseous rare earth chalcogenide. The gaseous rare earth chalcogenide is then deposited as a thin film on a substrate heated to 200oC to about 400oC.</p> |
