| 摘要 |
PURPOSE:To prevent the generation of the irregularities of a protective-film forming surface even in bar-shaped semiconductor laser groups having variable width by using a mask with an opening in width narrower than the length of the bar-shaped semiconductor laser groups when a plurality of the bar-shaped semiconductor laser groups are arranged densely and an end-surface protective film is shaped. CONSTITUTION:A first mask 12 with an opening 12a and a cover 13 with an opening 13a are disposed onto the upper surface of a spacer 11. The spacer 11 fills the role of a guide for erecting the bar-shaped semiconductor laser groups 21 (211-214) while downward directing the end surfaces of resonators in the groups 21 at that time. The width A of an opening section 11a for the spacer 11 is wider than length in the longitudinal direction of the laser groups 21, and the width B of the opening 12a is narrower than length in the longitudinal direction of the bar-shaped semiconductor laser groups 21. On the other hand, a second mask 14 having the same shape as the mask 12 and a base 15 having approximately the same form as the cover 13 are arranged onto the lower surface of the spacer 11, and function as the keeping of the groups 21 in parallel. |
