| 摘要 |
PURPOSE:To form electrodes comprising high-melting-point metal readily and with good reproducibility, by lifting off the metal by using a light sensitive polyimide resin film or a light sensitive polyamide resin film. CONSTITUTION:On a GaAs substrate 11, an active layer 12 is formed. A source electrode 14, a drain electrode 15 and an insulating film 13 are formed on the surface of the layer 12. Then, a gate electrode pattern is formed by a light sensitive polyimide film or a light sensitive polyamide resin film. With the film 16 as a mask, the film 23 is etched by a dry etching method, and a gate electrode hole 17 is formed. Then, a gate electrode film 18 is evaporated. Unnecessary films 16 and 18 are removed by a separating liquid, and a gate electrode 18' is formed. Since the lift-off is performed by using the light sensitive resin having good heat resistance property, the electrodes comprising high-melting- point metal can be readily formed with good reproducibility.
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