| 摘要 |
PURPOSE:To obtain a single crystal having controlled diameter and without any slip even in moderate environment while controlling the heating and cooling with the output of a temp. detector provided at the lower part of a crystal lifting shaft in the titled device by the Czochralski method wherein the shaft is cooled. CONSTITUTION:Ga and As, for example, are charged in a crucible 2, then a B2O3 capsuling material 5 is charged. The crucible is placed in a high-pressure vessel 1, and the inside of the vessel is pressurized with Ar and heated to form a GaAs melt 4. Then the pressure in the vessel 1 is reduced to a pressure at which a crystal is lifted. The thermal environment in the melt 4 and the material 5 is moderately set by the first and the second resistance heater 61 and 62 among the heaters 61 and 62 and the third heater 7. The oil 13 in an oil bath (cooling mechanism) 12 is circulated by a pump 15, the flow rate is regulated by a valve 16, and seeding is carried out. At this time, the regulation is performed so that the temp. distribution measured by a thermocouple (temp. detector) 11, namely the differential thermal pattern in the axial direction of a lifting shaft 10, is specified. Then lifting is started, the valve 16 is regulated, the power supply to the heaters 61, 62, and 7 is controlled while monitoring the output of the thermocouple 11 to form the specified differential thermal pattern.
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