| 摘要 |
The present invention provides a method for analysing the surface of an integrated circuit wafer 1 covered with a layer during attack by a fluid, comprising steps consisting in projecting onto the surface of the wafer a beam 2 of coherent monochromatic light with a cross section which is very large compared to the size of an elementary pattern of the integrated circuit, and in concentrating the light re-emitted in the focal plane of an objective lens 6. This method furthermore consists in masking the central part of the focal plane with a mask of sufficient diameter in order to hide the zero order of the diffraction pattern 7 of the light spot 4 formed on the wafer; in measuring the light intensity present at the periphery of the mask, and in determining the moment when this light intensity becomes constant. Application to determining the end of processing of a resin layer. <IMAGE>
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