| 摘要 |
<p>PURPOSE:To prevent the exposure of the root of a lead even through slightly excess etching when the whole is isolated into semiconductor chips through etching by a mixed acid liquid by projecting the pattern of an insulating film in specific length to the scribing line side from the root of the lead and leaving a margin in the pattern. CONSTITUTION:When manufacturing a beam lead type semiconductor device, an insulating film 2 is shaped onto the surface of a semiconductor substrate 1 with an internal element to a form 2a that the lower section of at least a lead 3 is made further projecting to the leading-out section 3a side of the lead 3 by 10-20mum than the root section 3b of the lead 3. The leads 3 having a predetermined pattern are shaped onto the surface of said semiconductor substrate 1 through said insulating film 2, and the surface of an insulating substrate 4 and the surface of said semiconductor substrate 1 are bonded with wax 5. A photo-resist film 6 having a prescribed pattern is formed onto the rear of said semiconductor substrate 1, and the semiconductor substrate 1 is etched, using the photo-resist film 6 as a mask, thus isolating the substrate 1 into semiconductor chips 7.</p> |
