| 摘要 |
<p>PURPOSE:To substantially increase electron emission efficiency by providing a low work function material at a portion corresponding to the electron emission surface of a conductive material, forming an insulator layer via the coverage of the layer of the aforesaid material and providing a metal material layer on the insulator layer. CONSTITUTION:An aluminum thin film is formed as a conductive material 1 to the predetermined thickness on a substrate 6 comprising glass via a vacuum deposition process. Thereafter, the predetermined thickness of Ba, YB6 or the like is formed as a low work function material layer 2 of 120mum diameter on the conductive material 1 at a position corresponding, for example, to the electron emission surface 5 of 100mum diameter. Thereafter. Al2O3 or SiO2 or the like is formed to the predetermined thickness as an insulator layer 3 and Au or Al as a metal layer 4 is formed thereon via a cluster ion beam deposition process. In this case, voltage is applied between the conductive material 1 of an electron emission element and the metal layer 4 so that the metal layer 4 will be charged positively, and it is thereby possible to obtain a large amount of emitted electrons via the application of low voltage.</p> |
