发明名称 PRODUCTION OF POROUS SILICON CARBIDE SINTERED COMPACT
摘要 PROBLEM TO BE SOLVED: To produce a porous silicon carbide sintered compact having high porosity and high strength and capable of easy control of pore diameter. SOLUTION: Silicon carbide whiskers are mixed with 30-50wt.% &alpha;-silicon carbide powder of <=30&mu;m, preferably 0.5-10&mu;m average particle diameter and the resultant mixture is compacted and sintered at 1,90O-2,100 deg.C in a nonoxidizing atmosphere.
申请公布号 JPH0952780(A) 申请公布日期 1997.02.25
申请号 JP19950225893 申请日期 1995.08.10
申请人 TOKAI CARBON CO LTD 发明人 INAMINE ATSUSHI
分类号 C04B35/56;C04B35/81;C04B38/00;C04B38/06 主分类号 C04B35/56
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