| 摘要 |
<p>PURPOSE:To reduce wiring resistance of a selective electrode and to form a TFT of low height by burying the electrode and a gate electrode in a groove formed on an insulating film on a glass board. CONSTITUTION:An insulating film 13 formed on a glass board 12, a gate electrode 16 and a groove 14 formed on the film 13 of a part formed with a selection electrode 15 continued to the electrode 16, conductors for forming the electrodes 16, 15 buried in the groove 14, a gate insulating film 17 formed on the electrode 16 and an amorphous silicon layer 18 formed on the film 17 are provided. For example, an SiO2 insulating film 13 is formed about 3000Angstrom thick on the board 12 by a CVD method, and the electrodes 15, 16 are buried in the groove 14 formed on the film 13 by photolithography. The upper surfaces of the electrodes 15, 16 substantially coincide with the surface of the film 13 to form a flat surface.</p> |
