OPTICAL MASK FOR LITHOGRAPHY

摘要

PURPOSE:To increase the effect of a phase shift and to from fine patterns by providing a phase shifter which is provided on a single pattern or auxiliary pattern and decreases the transmissivity of the exposing light of the single pattern to the value smaller than the transmissivity of the light transmitted through the auxiliary pattern by shifting the phase of the exposing light by 180 deg.. CONSTITUTION:The single pattern 3 is formed on a quartz glass substrate 1. The auxiliary pattern 9 having a rectangular aperture is formed around this single pattern 3 in parallel with the respective sides of the aperture of the single pattern 3. The phase shifter 5 which inverts the phase of the light transmitted through the single pattern 3 by 180 deg. from the light transmitted through the auxiliary pattern 9 and allows this light to arrive on the surface of a wafer is provided on the single pattern 3. The resolving power of the exposing light is enhanced in this way and the effect of the phase shift is improved and, therefore, the fine patterns are formed on the wafer.