发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To read out data at high speed by providing a differential amplifier means which amplifies and holds the potential difference of a dummy cell on the other side of a pair of bit lines, and connecting a transmission transistor between the bit lines. CONSTITUTION:The transmission transistor 55 is provided on the bit line 38 between a memory cell 40 and a differential amplifier circuit 29. When the memory cell 40 connected to the bit line 38 is selected, a word line 41 is set at an 'H', and a dummy cell 58 at 'OH'. Furthermore, when the word line 41 is selected, the data stored in all the memory cells connected to the word line 41 are amplified by the differential amplifier circuit, respectively, then, are latched. Therefore, it is possible to dispense with a differential amplification operation in a second readout operation. Thereby, the data can be read out at high speed.</p>
申请公布号 JPH0411396(A) 申请公布日期 1992.01.16
申请号 JP19900114282 申请日期 1990.04.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 TERADA YASUSHI;KOBAYASHI KAZUO;NAKAYAMA TAKESHI;MIYAWAKI YOSHIKAZU;HAYASHIGOE MASANORI
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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