| 摘要 |
<p>PURPOSE:To enable a ferroelectric body thin film to be highly oriented in a direction of polarization axis and performance of an element to be improved by constituting a lower electrode directly below the ferroelectric body thin film of a palladium thin film. CONSTITUTION:A dielectric film SiO2 10 is formed on an Si substrate 9, a Ti film 11 of a lower electrode is formed on it, and then a lower electrode Pd thin film 12 is formed on it by the DC sputtering method while applying a bias voltage. A ferroelectric body thin film 13 is formed on it and an Al thin film 14 is formed on it as an upper electrode. Lead titanate, titanate Zr, and titanate ZrLaPb can be used for the ferroelectric body thin film. A high C-axis orientation film can be obtained by forming a tetragonal PZT system ferroelectric body on Pd which is predominantly oriented in (100) direction. Also, a high (111) orientation can be obtained by forming a PTZ system ferroelectric body in shombic crystal structure with a polarization axis in (111) direction on Pb which is predominantly oriented in (111) direction.</p> |
