| 摘要 |
A multiple wavelength semiconductor laser includes a plurality of layers, one or more of said layers comprising a carrier confinement (multiple quantum well) active region of the type wherein at least two confining regions (quantum wells) contained in the active region are formed such that one quantum level of a first region (quantum well) is at the same energy level as a different quantum level of a second region (quantum well). This alignment of the quantum levels between two confinement regions (quantum wells) results in the recombination of carriers from one region augmenting the recombination of carriers from the other region, the net effect being an output intensity at both shorter and longer wavelengths of operation more nearly equal than heretofore available. Appropriate placement of the regions within the laser waveguide also facilitates a matching of the output intensity profile with a desired output mode, e.g., the fundamental mode TE00.
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