发明名称 |
MOS power transistor device with temperature compensation |
摘要 |
A device including a MOS power transistor, and a temperature sensor including a bipolar transistor integrated in the MOS transistor and having its emitter and collector connected directly to the source and gate terminals respectively of the MOS transistor. Parallel to the base-emitter junction of the bipolar transistor, there is connected a voltage source for biasing the junction to such a value that the bipolar transistor remains off at room temperature, and absorbs the maximum current supplied by a drive circuit of the MOS transistor at the maximum permissible temperature TUM. At temperature TUM, the bipolar transistor takes over control of the gate-source voltage of the MOS transistor for maintaining thermal feedback of the device at maximum temperature TUM.
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申请公布号 |
US5396119(A) |
申请公布日期 |
1995.03.07 |
申请号 |
US19930047803 |
申请日期 |
1993.04.15 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
BRASCA, GUIDO;BOTTI, EDOARDO |
分类号 |
H01L29/78;H01L21/336;H01L27/02;H03K17/08;(IPC1-7):H03K3/26 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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