发明名称 POWER-UP RESETTING SIGNAL GENERATING CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To obtain a power up preset signal generation circuit capable of generating an accurate power up reset signal, even in a semiconductor device using a reverse bias voltage. SOLUTION: A PMOS transistor(TR) 5 to be turned on by reverse bias voltage Vbb is connected to an output node n12 for outputting a reset signal. An NMOS TR 4b has a long-channel length. When the channel length of the TR 4b is extended, an accurate reset signal is not generated, even when voltage Vdd is boosted up to a sufficiently high level. A reset state may be held, but when a voltage Vbb starts to be generated after a sufficiently high level of the voltage Vdd, the TR 5 is turned on and pull-down operation is executed, so that no trouble is generated.</p>
申请公布号 JPH08321758(A) 申请公布日期 1996.12.03
申请号 JP19960121452 申请日期 1996.05.16
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHIYOU ICHIZAI
分类号 H03K17/00;H03K17/22;(IPC1-7):H03K17/22 主分类号 H03K17/00
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