发明名称 TITANIUM METAL TREATMENT METHOD, METHOD OF FORMING AN ELECTRICALLY CONDUCTIVE INTERCONNECT, AND METHOD OF REDUCING CONTACT RESISTANCE OF AN ELEMENTAL TITANIUM CONTACT
摘要 In one aspect of the invention, a method of treating a titanium containing metal includes: a) forming a mass of titanium containing metal having an exposed outer surface; and b) subjecting the exposed outer surface of the titanium containing metal to a plasma comprising hydrogen and nitrogen, the plasma being substantially void of any separate titanium component. In another aspect of the invention, a method of forming an electrically conductive interconnect between an inner location and an outer location includes: a) providing a first node location to which electrical connection is to be made at a first inner location; b) forming a mass of titanium containing metal over and in electrical connection with the first node location, the titanium metal mass having an exposed outer surface; c) subjecting the exposed outer surface of the titanium metal mass to a plasma comprising hydrogen and nitrogen, the plasma being substantially void of any separate titanium component; and d) forming an electrically conductive circuit component outwardly of and in electrical connection with the plasma treated outer surface, the titanium metal mass being received intermediate the first node location and the electrically conductive circuit component. The invention has utility in reducing contact resistance of an elemental titanium containing contact by reducing electrical resistance in at least the outer portion of such contact.
申请公布号 WO9843284(A1) 申请公布日期 1998.10.01
申请号 WO1998US06170 申请日期 1998.03.27
申请人 MICRON TECHNOLOGY, INC. 发明人 SHARAN, SUJIT;SANDHU, GURTEJ, S.
分类号 C23C8/36;C23C16/14;C23C16/56;H01L21/321;(IPC1-7):H01L21/285;C23C8/38 主分类号 C23C8/36
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