发明名称 PSEUDO-FUSE AND CIRCUIT USING PSEUDO-FUSE
摘要 <p>PROBLEM TO BE SOLVED: To provide a first low resistance condition and a second higher resistance condition, and switch a condition to the second condition from the first condition when an electric current passes by including a polysilicon area coated with a silicide area of an upper surface between two contacts. SOLUTION: An upper surface 3 of a polysilicon area 2 formed on a separating layer 1 is silicified. First low resistivity can be substantially obtained by high electric conductivity of a silicide area (a first condition). When a high electric current flows between metallization contacts 5 and 6, a resistance between the contacts 5 and 6 is connected to a doping level of the polysilicon area 2, and reaches a very high value (a second condition). Programming is performed so as to automatically become the first or the second condition when power is turned on according to a condition of a pseudo-fuse.</p>
申请公布号 JPH10340663(A) 申请公布日期 1998.12.22
申请号 JP19980054824 申请日期 1998.03.06
申请人 ST MICROELECTRON SA 发明人 KALNITSKY ALEXANDER;FERRANT RICHARD
分类号 H03K3/356;H01L21/768;H01L21/82;H01L23/525;(IPC1-7):H01H85/04 主分类号 H03K3/356
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