SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To expand the data holding part of a memory cell without damaging the stability and also to make the sense unnecessary in a semiconductor memory device. SOLUTION: A memory cell is provided with one digit line DR for read operation. In the initial stage of the read operation, one shot pulse is added to a MOS transistor M11 so as to be in an on-state for a short time by a pulse generating circuit PG and as the result, the digit line DR is picked up to a power source potential Vcc. The pulling down of the digit line DR to the grounding potential is performed by MOS transistors M5, M6.