发明名称 POWER TRANSISTOR OVERCURRENT PROTECTION CIRCUIT
摘要 <p>An overcurrent protection circuit for a power transistor for flowing a main current in response to a gate drive voltage generated by a gate circuit. The overcurrent protection circuit includes a current detection circuit for detecting the main current flowing in the power transistor to generate a detection voltage corresponding to the main current, and a level detection circuit connected to receive the detection voltage for generating a control current corresponding to a difference between the detection voltage and a prescribed value when the detection voltage exceeds the prescribed value. The overcurrent protection circuit further includes a current control circuit connected to receive the control current for limiting the main current by regulating the gate drive voltage based on the control current, and a drive instruction control circuit connected to receive the control current for making the main current zero by controlling the gate drive voltage to an OFF condition based on the control current.</p>
申请公布号 KR970003185(B1) 申请公布日期 1997.03.14
申请号 KR19930019063 申请日期 1993.09.20
申请人 TOSHIBA KK.;TOSHIBA SYSTEM ENGINEERING KK. 发明人 OKADO, CHIHIRO;HIDESHIMA, MAKOTO
分类号 H03K17/082;(IPC1-7):H02H3/08;H02H9/02 主分类号 H03K17/082
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