| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel capacitor design which uses a stacked strucrure and which can also be used for a floating gate transistor, and to provide a method of manufacturing the capacitor. SOLUTION: A first electrical contact 280 is electrically coupled with conductive regions 220, 230, formed in a substrate 200 and a with a control gate layer 270. A second electrical contact 290 is electrically coupled with a floating gate layer 250, forming a plate between the substrate and the control gate layer. The footprint of this capacitor is reduced, by using both sides of the floating gate layer as a capacitive plate. Parasitic capacitance is reduced relatively. One or more dielectric layers can be formed for both capacitors and floating gate transistors on the substrate, in one or more identical process steps. |
