CRUCIBLE FOR PULLING SEMICONDUCTOR SILICON SINGLE CRYSTAL AND METHOD FOR PRODUCING SEMICONDUCTOR SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To suppress the generation of vibration at liquid surface when a large diameter ingot is pulled while using a quartz crucible by a Czochralski method being one method for producing a silicon single crystal. SOLUTION: It is possible to suppress the deformation of the crucible and the generation of vibration at the liquid surface and to pull the large diameter silicon ingot in a good yield by providing a crucible for pulling semiconductor silicon. The crucible has been melted while vacuum exhausting in a vacuum vessel having a rotary mold and heating electrodes and has an inner transparent layer containing OH in an amount of <=5 ppm, in which the inner transparent layer to a depth of at least 1 mm from the surface is made of synthetic quartz.