| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline silicon thin film, having a proper crystallization in a short time and stably, using inductive- coupled plasma CVD method. SOLUTION: An inductive coupled plasma CVD apparatus includes a reaction chamber having a vacuum state kept therein, a reaction gas supply means for supplying a reaction gas including a silane-based gas into the reaction chamber, a reaction gas plasma generating means for plasmatizing the reaction gas to generate a reaction-gas inductive-coupled plasma by applying a high frequency power to a high frequency application coil of two or more turns, coated with an insulating material such as alumina or the like of 10 to 1000μm in thickness and positioned inside or outside the reaction chamber, and a substrate-holding means for holding a substrate having a thin film formed on its surface. A polycrystalline silicon film is formed on the substrate at a reaction pressure of 5 to 50 pa with the use of the CVD apparatus.</p> |
