| 摘要 |
PROBLEM TO BE SOLVED: To increase resistance to electrostatic destruction in semiconductor components. SOLUTION: In the semiconductor component 10A, an IC(integrated circuit) chip 11 is placed on a heat sink 12, circuit leads 131, 132,...13n are placed on the heat sink 12 via an insulator 14 formed by resin or the like. The circuit leads 131, 132,...13n are connected to a specific place in the IC chip 11 via wires 171, 172,...17n near the insulator 14. Also, a by-pass lead 13n+1 is connected to the heat sink 12 via a wire 17n+1. The by-pass lead 13n+1 makes continuity with the heat sink 12, thus short-circuiting an electrostatic voltage by the route of a radiator 21, the heat sink 12, the wire 17n+1, the y-pass lead 13n+1, solder 23, a patterning, and a grounding circuit 29 even if the electrostatic voltage is applied to the semiconductor component 10A. The electrostatic voltage is hardly applied to the IC chip 11. |
