摘要 |
A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30 . The semiconductor device defines a row direction, and first virtual linear lines L 1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L 1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L 1 . The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L 2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L 2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L 2.
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