| 摘要 |
A semiconductor device is provided with a substrate; an insulating film, which is formed on the substrate and is composed of a fluorine added carbon film; a copper wiring embedded in the insulating film; and a barrier film formed between the insulating film and the copper wiring. The barrier film is provided with a first film composed of titanium, for suppressing diffusion of the fluorine; and a second film composed of tantalum between the first film and the copper wiring, for suppressing diffusion of the copper. |
