发明名称 |
DESIGN STRUCTURES INCLUDING MEANS FOR LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DEVICES |
摘要 |
A design structure including a semiconductor structure. The semiconductor structure includes (a) a substrate; (b) a first semiconductor device on the substrate; (c) N ILD (Inter-Level Dielectric) layers on the first semiconductor device, wherein N is an integer greater than one; and (d) an electrically conductive line electrically coupled to the first semiconductor device. The electrically conductive line is adapted to carry a lateral electric current in a lateral direction parallel to an interfacing surface between two consecutive ILD layers of the N ILD layers. The electrically conductive line is present in at least two ILD layers of the N ILD layers. The electrically conductive line does not comprise an electrically conductive via that is adapted to carry a vertical electric current in a vertical direction perpendicular to the interfacing surface.
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申请公布号 |
US2009106726(A1) |
申请公布日期 |
2009.04.23 |
申请号 |
US20070873711 |
申请日期 |
2007.10.17 |
申请人 |
FEILCHENFELD NATALIE BARBARA;HE ZHONG-XIANG;LIU QIZHI;RAINEY BETHANN;WANG PING-CHUAN;WATSON KIMBALL M |
发明人 |
FEILCHENFELD NATALIE BARBARA;HE ZHONG-XIANG;LIU QIZHI;RAINEY BETHANN;WANG PING-CHUAN;WATSON KIMBALL M. |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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