| 摘要 |
A blue-green light emitting semiconductor having an In-Ga-N heterostructure and covered with a light-converting layer formed of a thermosetting polymer layer and an inorganic phosphor having a long wave Stokes radiation displacement characteristic, characterized in that the In-Ga-N semiconductor heterostructure emits light in near ultraviolet region lambda=375~405 nm, the light-converting layer converts the emission lambda=375~405 nm to wavelength lambda=505~515 nm; the wavelength light emitted by the light-converting layer has Stokes displacement 135~105 nm, color coordinates 0.15<x<=0.22, 0.55<y<=0.60, spectrum curve half-wave width Deltalambda<=60 nm, and afterglow duration smaller than 100 ns. The invention also discloses a phosphor for use in a blue-green light-emitting semiconductor.
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